阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

时间:2023-03-08 22:14:18

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

1.PLL reference clock frequency

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

此处控制器输入时钟设置为100MHz,同样在顶层文件的代码中也有体现:

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

2.Memory clock frequency

此时钟是传给memory device的,根据需要在设备最大频率与最小频率之间的值。

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记3.关于phy_clk和reset_phy_clk_n这一对信号

控制器发送需要写入memory的数据,和接受从memory读取的数据,地址信号等都需要用时钟(phy_clk)。

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

4.关于memory burst length的设定

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记当controller data rate:half,local interface是memory data bus的四倍,如下图中:

Inout  [15:0]mem_dq;

wire   [63:0]local_wdata;

wire   [63:0]local_rdata;

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记当controller data rate:Full,local interface是memory data bus的2倍,如下图中:

inout  [15:0]mem_dq;

input   [31:0]local_wdata;

output   [31:0]local_rdata;

阅读 ‘External Memory PHY Interface (ALTMEMPHY)’笔记