嵌入式nand flash详解

时间:2023-02-03 18:48:41

一、s3c2440启动后会将nand flash的前4K程序复制到内部的sram中,这个过程是硬件自动完成的,但是如果我们的程序远远大于4K,这个时候就需要将程序从flash拷贝到内存中来运行了。

嵌入式nand flash详解

二、nand flash 接线图可以看出,nand flash没有地址总线,是八根数据线,SDRAM和网卡有地址总接到s3c2440的地址总线了,而nand flash没有地址线,所以他们的寻址方式不一样,SDRAM和网卡的地址是CPU可以看得见的,也就是CPU统一编址,而nand flash呢?也有地址空间,以256M为例,寻址空间256M,SDRAM寻址空间0x30000000-0x34000000 ,片内内存及gpio及内部寄存器,网卡都有一块地址,由CPU统一的编址空间,由于寻址的方式不同我们说0地址时概念是不一样的。从图上可以看出,不管是命令地址还是数据都是通过8条数据线传输的,那么控制信号就起到了重要的作用,CLE命令使能信号、ALE地址使能信号、FWE写使能信号、FRE读使能信号如果CLE和ALE都无效就是数据。

三、nand flash的结构

嵌入式nand flash详解

从图中可以看出一个大叶是2K加64字节 64页组成一块 加的64字节是00B

读nand flash 上2049地址,其实是读第一页。

对于你特定的某一页,非要强调一页的2049很有可能是OOB上的地址。

nand flash编址如下图:

嵌入式nand flash详解

四、访问nand flash

回忆访问内存:1、发出地址、2、传输数据


访问nand flash类似  1、发出地址、2、传输数据
a、发出命令(读、写、擦除等等),b、发出地址,c、传输数据
看手册命令:
如图命令集

嵌入式nand flash详解

访问nand flash 都需要引脚来控制,那么nand flash控制器就完成这些操作。
所有的操作都交给nand flash控制器
比如要发出命令,将命令值写进寄存器NFCMMD中,s3c2440就会自动的驱动CLE引脚,把命令发送到nand flash中去,操作地址时,仅需要将值写进寄存器NFADDR,读数据和写数据时,也是将地址值写进NFADDR。

先看链接地址和运行地址:

SECTIONS { 
firtst 0x00000000 : { head.o init.o nand.o}
second 0x30000000 : AT(4096) { main.o }
}

这是段,分为两段,0x00000000和0x30000000是运行地址,第二段AT,表明加载地址是nand flash 4096处,没有AT,运行地址和加载地址一样都是起始地址。

head.o init.o nand.o从nand flash0地址开始放,s3c2440启动会将这段程序copy到sram中运行,main.o放在nand flash4096处,会被读到SDRAM的0x30000000地址中执行。

如下图:

嵌入式nand flash详解

总结:
a、从硬件访问nand flash
1、发出命令:CLE引脚,命令放进数据总线上
2、发出地址:ALE,地址放进数据总线上
3、传输数据:R/W


b、2440精简了以上操作:
1、发出命令:NFCMMD,把命令写进这个寄存器后,会自动的发送信号
2、发出地址:NFADDR,把地址值写进这个寄存器后,会自动的发送地址
3、传输数据:NFDATA,
4、状态,比如擦除,只有先发出擦除命令,再发出地址,就开始擦除,那么需要等待一会才能擦除成功,那么这个状态需要读回来,NFSTAT

主要操作的nand flash控制器寄存器:

命令寄存器NFCMMD
地址寄存器NFADDR
数据寄存器NFDAYA
状态寄存器NFSTAT

从nand flash读数据,那么就要确认从哪里读,读到哪里去,读多少

下面分析程序:

head.S

@******************************************************************************
@ File:head.s
@ 功能:设置SDRAM,将程序复制到SDRAM,然后跳到SDRAM继续执行
@******************************************************************************

.text
.global _start
_start:
@函数disable_watch_dog, memsetup, init_nand, nand_read_ll在init.c中定义
ldr sp, =4096 @设置堆栈
bl disable_watch_dog @关WATCH DOG
bl memsetup @初始化SDRAM
bl nand_init @初始化NAND Flash

@将NAND Flash中地址4096开始的1024字节代码(main.c编译得到)复制到SDRAM中
@nand_read_ll函数需要3个参数:
ldr r0, =0x30000000 @1. 目标地址=0x30000000,这是SDRAM的起始地址
mov r1, #4096 @2. 源地址 = 4096,连接的时候,main.c中的代码都存在NAND Flash地址4096开始处
mov r2, #2048 @3. 复制长度= 2048(bytes),对于本实验的main.c,这是足够了
bl nand_read @调用C函数nand_read

ldr sp, =0x34000000 @设置栈
ldr lr, =halt_loop @设置返回地址
ldr pc, =main @b指令和bl指令只能前后跳转32M的范围,所以这里使用向pc赋值的方法进行跳转
halt_loop:
b halt_loop

init.c

/* WOTCH DOG register */
#define WTCON(*(volatile unsigned long *)0x53000000)

/* SDRAM regisers */
#define MEM_CTL_BASE0x48000000

void disable_watch_dog();
void memsetup();

/*上电后,WATCH DOG默认是开着的,要把它关掉 */
void disable_watch_dog()
{
WTCON= 0;
}

/* 设置控制SDRAM的13个寄存器 */
void memsetup()
{
int i = 0;
unsigned long *p = (unsigned long *)MEM_CTL_BASE;

/* SDRAM 13个寄存器的值 */
unsigned long const mem_cfg_val[]={ 0x22011110, //BWSCON
0x00000700, //BANKCON0
0x00000700, //BANKCON1
0x00000700, //BANKCON2
0x00000700, //BANKCON3
0x00000700, //BANKCON4
0x00000700, //BANKCON5
0x00018005, //BANKCON6
0x00018005, //BANKCON7
0x008C07A3, //REFRESH
0x000000B1, //BANKSIZE
0x00000030, //MRSRB6
0x00000030, //MRSRB7
};

for(; i < 13; i++)
p[i] = mem_cfg_val[i];
}

nand.c

#define LARGER_NAND_PAGE

#define GSTATUS1 (*(volatile unsigned int *)0x560000B0)
#define BUSY 1

#define NAND_SECTOR_SIZE 512
#define NAND_BLOCK_MASK (NAND_SECTOR_SIZE - 1)

#define NAND_SECTOR_SIZE_LP 2048
#define NAND_BLOCK_MASK_LP (NAND_SECTOR_SIZE_LP - 1)

typedef unsigned int S3C24X0_REG32;


/* NAND FLASH (see S3C2410 manual chapter 6) */
typedef struct {
S3C24X0_REG32 NFCONF;
S3C24X0_REG32 NFCMD;
S3C24X0_REG32 NFADDR;
S3C24X0_REG32 NFDATA;
S3C24X0_REG32 NFSTAT;
S3C24X0_REG32 NFECC;
} S3C2410_NAND;

/* NAND FLASH (see S3C2440 manual chapter 6, www.100ask.net) */
typedef struct {
S3C24X0_REG32 NFCONF;
S3C24X0_REG32 NFCONT;
S3C24X0_REG32 NFCMD;
S3C24X0_REG32 NFADDR;
S3C24X0_REG32 NFDATA;
S3C24X0_REG32 NFMECCD0;
S3C24X0_REG32 NFMECCD1;
S3C24X0_REG32 NFSECCD;
S3C24X0_REG32 NFSTAT;
S3C24X0_REG32 NFESTAT0;
S3C24X0_REG32 NFESTAT1;
S3C24X0_REG32 NFMECC0;
S3C24X0_REG32 NFMECC1;
S3C24X0_REG32 NFSECC;
S3C24X0_REG32 NFSBLK;
S3C24X0_REG32 NFEBLK;
} S3C2440_NAND;


typedef struct {
void (*nand_reset)(void);
void (*wait_idle)(void);
void (*nand_select_chip)(void);
void (*nand_deselect_chip)(void);
void (*write_cmd)(int cmd);
void (*write_addr)(unsigned int addr);
unsigned char (*read_data)(void);
}t_nand_chip;

static S3C2410_NAND * s3c2410nand = (S3C2410_NAND *)0x4e000000;
static S3C2440_NAND * s3c2440nand = (S3C2440_NAND *)0x4e000000;

static t_nand_chip nand_chip;

/* 供外部调用的函数 */
void nand_init(void);
void nand_read(unsigned char *buf, unsigned long start_addr, int size);

/* NAND Flash操作的总入口, 它们将调用S3C2410或S3C2440的相应函数 */
static void nand_reset(void);
static void wait_idle(void);
static void nand_select_chip(void);
static void nand_deselect_chip(void);
static void write_cmd(int cmd);
static void write_addr(unsigned int addr);
static unsigned char read_data(void);

/* S3C2410的NAND Flash处理函数 */
static void s3c2410_nand_reset(void);
static void s3c2410_wait_idle(void);
static void s3c2410_nand_select_chip(void);
static void s3c2410_nand_deselect_chip(void);
static void s3c2410_write_cmd(int cmd);
static void s3c2410_write_addr(unsigned int addr);
static unsigned char s3c2410_read_data();

/* S3C2440的NAND Flash处理函数 */
static void s3c2440_nand_reset(void);
static void s3c2440_wait_idle(void);
static void s3c2440_nand_select_chip(void);
static void s3c2440_nand_deselect_chip(void);
static void s3c2440_write_cmd(int cmd);
static void s3c2440_write_addr(unsigned int addr);
static unsigned char s3c2440_read_data(void);

/* S3C2410的NAND Flash操作函数 */

/* 复位 */
static void s3c2410_nand_reset(void)
{
s3c2410_nand_select_chip();
s3c2410_write_cmd(0xff); // 复位命令
s3c2410_wait_idle();
s3c2410_nand_deselect_chip();
}

/* 等待NAND Flash就绪 */
static void s3c2410_wait_idle(void)
{
int i;
volatile unsigned char *p = (volatile unsigned char *)&s3c2410nand->NFSTAT;
while(!(*p & BUSY))
for(i=0; i<10; i++);
}

/* 发出片选信号 */
static void s3c2410_nand_select_chip(void)
{
int i;
s3c2410nand->NFCONF &= ~(1<<11);
for(i=0; i<10; i++);
}

/* 取消片选信号 */
static void s3c2410_nand_deselect_chip(void)
{
s3c2410nand->NFCONF |= (1<<11);
}

/* 发出命令 */
static void s3c2410_write_cmd(int cmd)
{
volatile unsigned char *p = (volatile unsigned char *)&s3c2410nand->NFCMD;
*p = cmd;
}

/* 发出地址 */
static void s3c2410_write_addr(unsigned int addr)
{
int i;
volatile unsigned char *p = (volatile unsigned char *)&s3c2410nand->NFADDR;

*p = addr & 0xff;
for(i=0; i<10; i++);
*p = (addr >> 9) & 0xff;
for(i=0; i<10; i++);
*p = (addr >> 17) & 0xff;
for(i=0; i<10; i++);
*p = (addr >> 25) & 0xff;
for(i=0; i<10; i++);
}

/* 读取数据 */
static unsigned char s3c2410_read_data(void)
{
volatile unsigned char *p = (volatile unsigned char *)&s3c2410nand->NFDATA;
return *p;
}

/* S3C2440的NAND Flash操作函数 */

/* 复位 */
static void s3c2440_nand_reset(void)
{
s3c2440_nand_select_chip();
s3c2440_write_cmd(0xff); // 复位命令
s3c2440_wait_idle();
s3c2440_nand_deselect_chip();
}

/* 等待NAND Flash就绪 */
static void s3c2440_wait_idle(void)
{
int i;
volatile unsigned char *p = (volatile unsigned char *)&s3c2440nand->NFSTAT;
while(!(*p & BUSY))
for(i=0; i<10; i++);
}

/* 发出片选信号 */
static void s3c2440_nand_select_chip(void)
{
int i;
s3c2440nand->NFCONT &= ~(1<<1);
for(i=0; i<10; i++);
}

/* 取消片选信号 */
static void s3c2440_nand_deselect_chip(void)
{
s3c2440nand->NFCONT |= (1<<1);
}

/* 发出命令 */
static void s3c2440_write_cmd(int cmd)
{
volatile unsigned char *p = (volatile unsigned char *)&s3c2440nand->NFCMD;
*p = cmd;
}

/* 发出地址 */
static void s3c2440_write_addr(unsigned int addr)
{
int i;
volatile unsigned char *p = (volatile unsigned char *)&s3c2440nand->NFADDR;

*p = addr & 0xff;
for(i=0; i<10; i++);
*p = (addr >> 9) & 0xff;
for(i=0; i<10; i++);
*p = (addr >> 17) & 0xff;
for(i=0; i<10; i++);
*p = (addr >> 25) & 0xff;
for(i=0; i<10; i++);
}


static void s3c2440_write_addr_lp(unsigned int addr)
{
int i;
volatile unsigned char *p = (volatile unsigned char *)&s3c2440nand->NFADDR;
int col, page;

col = addr & NAND_BLOCK_MASK_LP;
page = addr / NAND_SECTOR_SIZE_LP;

*p = col & 0xff;/* Column Address A0~A7 */
for(i=0; i<10; i++);
*p = (col >> 8) & 0x0f; /* Column Address A8~A11 */
for(i=0; i<10; i++);
*p = page & 0xff;/* Row Address A12~A19 */
for(i=0; i<10; i++);
*p = (page >> 8) & 0xff;/* Row Address A20~A27 */
for(i=0; i<10; i++);
*p = (page >> 16) & 0x03;/* Row Address A28~A29 */
for(i=0; i<10; i++);
}


/* 读取数据 */
static unsigned char s3c2440_read_data(void)
{
volatile unsigned char *p = (volatile unsigned char *)&s3c2440nand->NFDATA;
return *p;
}


/* 在第一次使用NAND Flash前,复位一下NAND Flash */
static void nand_reset(void)
{
nand_chip.nand_reset();
}

static void wait_idle(void)
{
nand_chip.wait_idle();
}

static void nand_select_chip(void)
{
int i;
nand_chip.nand_select_chip();
for(i=0; i<10; i++);
}

static void nand_deselect_chip(void)
{
nand_chip.nand_deselect_chip();
}

static void write_cmd(int cmd)
{
nand_chip.write_cmd(cmd);
}
static void write_addr(unsigned int addr)
{
nand_chip.write_addr(addr);
}

static unsigned char read_data(void)
{
return nand_chip.read_data();
}


/* 初始化NAND Flash */
void nand_init(void)
{
#define TACLS 0
#define TWRPH0 3
#define TWRPH1 0

/* 判断是S3C2410还是S3C2440 */
if ((GSTATUS1 == 0x32410000) || (GSTATUS1 == 0x32410002))
{
nand_chip.nand_reset = s3c2410_nand_reset;
nand_chip.wait_idle = s3c2410_wait_idle;
nand_chip.nand_select_chip = s3c2410_nand_select_chip;
nand_chip.nand_deselect_chip = s3c2410_nand_deselect_chip;
nand_chip.write_cmd = s3c2410_write_cmd;
nand_chip.write_addr = s3c2410_write_addr;
nand_chip.read_data = s3c2410_read_data;

/* 使能NAND Flash控制器, 初始化ECC, 禁止片选, 设置时序 */
s3c2410nand->NFCONF = (1<<15)|(1<<12)|(1<<11)|(TACLS<<8)|(TWRPH0<<4)|(TWRPH1<<0);
}
else
{
nand_chip.nand_reset = s3c2440_nand_reset;
nand_chip.wait_idle = s3c2440_wait_idle;
nand_chip.nand_select_chip = s3c2440_nand_select_chip;
nand_chip.nand_deselect_chip = s3c2440_nand_deselect_chip;
nand_chip.write_cmd = s3c2440_write_cmd;
#ifdef LARGER_NAND_PAGE
nand_chip.write_addr = s3c2440_write_addr_lp;
#else
nand_chip.write_addr = s3c2440_write_addr;
#endif
nand_chip.read_data = s3c2440_read_data;

/* 设置时序 */
s3c2440nand->NFCONF = (TACLS<<12)|(TWRPH0<<8)|(TWRPH1<<4);
/* 使能NAND Flash控制器, 初始化ECC, 禁止片选 */
s3c2440nand->NFCONT = (1<<4)|(1<<1)|(1<<0);
}

/* 复位NAND Flash */
nand_reset();
}


/* 读函数 */
void nand_read(unsigned char *buf, unsigned long start_addr, int size)
{
int i, j;

#ifdef LARGER_NAND_PAGE
if ((start_addr & NAND_BLOCK_MASK_LP) || (size & NAND_BLOCK_MASK_LP)) {
return ; /* 地址或长度不对齐 */
}
#else
if ((start_addr & NAND_BLOCK_MASK) || (size & NAND_BLOCK_MASK)) {
return ; /* 地址或长度不对齐 */
}
#endif

/* 选中芯片 */
nand_select_chip();

for(i=start_addr; i < (start_addr + size);) {
/* 发出READ0命令 */
write_cmd(0);

/* Write Address */
write_addr(i);
#ifdef LARGER_NAND_PAGE
write_cmd(0x30);
#endif
wait_idle();

#ifdef LARGER_NAND_PAGE
for(j=0; j < NAND_SECTOR_SIZE_LP; j++, i++) {
#else
for(j=0; j < NAND_SECTOR_SIZE; j++, i++) {
#endif
*buf = read_data();
buf++;
}
}

/* 取消片选信号 */
nand_deselect_chip();

return ;
}
main.c

#defineGPFCON(*(volatile unsigned long *)0x56000050)
#defineGPFDAT(*(volatile unsigned long *)0x56000054)

#defineGPF4_out(1<<(4*2))
#defineGPF5_out(1<<(5*2))
#defineGPF6_out(1<<(6*2))

void wait(volatile unsigned long dly)
{
for(; dly > 0; dly--);
}

int main(void)
{
unsigned long i = 0;

GPFCON = GPF4_out|GPF5_out|GPF6_out;// 将LED1-3对应的GPF4/5/6三个引脚设为输出

while(1){
wait(30000);
GPFDAT = (~(i<<4)); // 根据i的值,点亮LED1-3
if(++i == 8)
i = 0;
}

return 0;
}

nand.lds

SECTIONS { 
firtst 0x00000000 : { head.o init.o nand.o}
second 0x30000000 : AT(4096) { main.o }
}

Makefile

objs := head.o init.o nand.o main.o

nand.bin : $(objs)
arm-linux-ld -Tnand.lds-o nand_elf $^
arm-linux-objcopy -O binary -S nand_elf $@
arm-linux-objdump -D -m arm nand_elf > nand.dis

%.o:%.c
arm-linux-gcc -Wall -c -O2 -o $@ $<

%.o:%.S
arm-linux-gcc -Wall -c -O2 -o $@ $<

clean:
rm -f nand.dis nand.bin nand_elf *.o